IXYS Corporation VIO600-12S | 搜芯易Sourcengine

IXYS Corporation VIO600-12S

生命周期状态
Transferred
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
4
Number of Elements
1
Power Dissipation-Max (W)
2300
Gate-emitter Voltage-Max (V)
30
Collector Current-Max (IC) (A)
600
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200