International Rectifier Corporation VH2N7261 | 搜芯易Sourcengine

International Rectifier Corporation VH2N7261

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Screening Level / Reference Standard
MIL-19500/601E