PROMOS TECHNOLOGIES INC V73CBG02808RFUJJ11I | 搜芯易Sourcengine

PROMOS TECHNOLOGIES INC V73CBG02808RFUJJ11I

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3L DRAM, 256MX8, CMOS, PBGA78
类别
Semiconductors Memory ICs DRAMs DDR3L DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
7.5
Access Mode
MULTI BANK PAGE BURST
Length (mm)
10.6
JESD-30 Code
R-PBGA-B78
Memory Width
8
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3L DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
256MX8
Number of Functions
1
Number of Terminals
78
Terminal Pitch (mm)
0.8
Number of Words Code
256M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.45
Supply Voltage-Min (V)
1.283
Supply Voltage-Nom (V)
1.35
Number of Words (words)
268435456
Sequential Burst Length
4,8
Standby Current-Max (A)
38
Supply Current-Max (mA)
250
Interleaved Burst Length
4,8
Package Equivalence Code
BGA78,9X13,32
Clock Frequency-Max (MHz)
800
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
-40