V73CBG02168RFUJI9
PROMOS TECHNOLOGIES INC
- 生命周期状态Active-Unconfirmed
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR3L DRAM, 128MX16, CMOS, PBGA96
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)7.5
- Access ModeMULTI BANK PAGE BURST
- Length (mm)13.5
- JESD-30 CodeR-PBGA-B96
- Memory Width16
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR3L DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization128MX16
- Number of Functions1
- Number of Terminals96
- Terminal Pitch (mm)0.8
- Number of Words Code128M
- Memory Density (bits)2147483648
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)1.45
- Supply Voltage-Min (V)1.283
- Supply Voltage-Nom (V)1.35
- Number of Words (words)134217728
- Sequential Burst Length4,8
- Standby Current-Max (A)46
- Supply Current-Max (mA)260
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA96,9X16,32
- Clock Frequency-Max (MHz)667
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)0
V73CBG02168RFUJI9有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
V73CBG02168RFUJI9