PROMOS TECHNOLOGIES INC V73CAG02408RFJG6I | 搜芯易Sourcengine

PROMOS TECHNOLOGIES INC V73CAG02408RFJG6I

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3 DRAM, 512MX4, CMOS
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Access Mode
MULTI BANK PAGE BURST
JESD-30 Code
R-PBGA-B
Memory Width
4
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
512MX4
Number of Functions
1
Number of Words Code
512M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
536870912
Sequential Burst Length
8
Supply Current-Max (mA)
240
Interleaved Burst Length
8
Clock Frequency-Max (MHz)
400
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
-40