PROMOS TECHNOLOGIES INC V59C1256168QAUP25AH | 搜芯易Sourcengine

PROMOS TECHNOLOGIES INC V59C1256168QAUP25AH

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR2 DRAM, 16MX16, 0.4ns, CMOS, PBGA92
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
9
Access Mode
MULTI BANK PAGE BURST
Length (mm)
17
JESD-30 Code
R-PBGA-B92
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
16MX16
Number of Functions
1
Number of Terminals
92
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.4
Number of Words Code
16M
Memory Density (bits)
268435456
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
16777216
Supply Current-Max (mA)
150
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED