Diodes Incorporated UZTX853STOB | 搜芯易Sourcengine

Diodes Incorporated UZTX853STOB

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-W3
Configuration
SINGLE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
WIRE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
20
Collector Current-Max (IC)
4 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
100 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Transition Frequency-Nom (fT)
130 MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED