ADVANCED POWER TECHNOLOGY INC UTV120 | 搜芯易Sourcengine

ADVANCED POWER TECHNOLOGY INC UTV120

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F8
Configuration
COMMON EMITTER, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
2
Number of Terminals
8
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
3.5
Collector-emitter Voltage-Max (V)
28