UTC, Ltd. UTT12P10L-TM3-T | 搜芯易Sourcengine

UTC, Ltd. UTT12P10L-TM3-T

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
12
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
95
DS Breakdown Voltage-Min (V)
100
Turn-off Time-Max (toff) (ns)
405
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
60
Pulsed Drain Current-Max (IDM) (A)
48
Drain-source On Resistance-Max (ohm)
0.2