UTC, Ltd. UTC654L-AE2-R | 搜芯易Sourcengine

UTC, Ltd. UTC654L-AE2-R

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.075ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, TO-236
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-236
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
1.1
Drain Current-Max (ID) (A)
3.6
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
104
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
1.1
Pulsed Drain Current-Max (IDM) (A)
10
Drain-source On Resistance-Max (ohm)
0.075