UTC, Ltd. UT5N06L-AA3-R | 搜芯易Sourcengine

UTC, Ltd. UT5N06L-AA3-R

生命周期状态
Active
说明
Power Field-Effect Transistor, 5A I(D), 60V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2
Drain Current-Max (ID) (A)
5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
32
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
2
Avalanche Energy Rating (Eas) (mJ)
76
Pulsed Drain Current-Max (IDM) (A)
15
Drain-source On Resistance-Max (ohm)
0.09