UTC, Ltd. UT4822G-P3030-R | 搜芯易Sourcengine

UTC, Ltd. UT4822G-P3030-R

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-F8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
20
Drain Current-Max (ID) (A)
8.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
140
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
40
Drain-source On Resistance-Max (ohm)
0.019