UT38N04G-P3030-R
UTC, Ltd.
- 生命周期状态Active
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 38A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)30
- Drain Current-Max (ID) (A)38
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)40
- Feedback Cap-Max (Crss) (pF)167
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)9
- Pulsed Drain Current-Max (IDM) (A)76
- Drain-source On Resistance-Max (ohm)0.0085
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UT38N04G-P3030-R