UTC, Ltd. UT2308G-AE3-R | 搜芯易Sourcengine

UTC, Ltd. UT2308G-AE3-R

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 2.7A I(D), 20V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
ULTRA-LOW RESISTANCE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
2.7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max (W)
1.25
Drain-source On Resistance-Max (ohm)
0.11
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED