UTC, Ltd. UT2301G-AB3-R | 搜芯易Sourcengine

UTC, Ltd. UT2301G-AB3-R

生命周期状态
Active
REACH
REACH compliant
说明
Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
0.8
Drain Current-Max (ID) (A)
2.8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Feedback Cap-Max (Crss) (pF)
56
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
0.8
Drain-source On Resistance-Max (ohm)
0.13