ONSEMI UMC3NT1 | 搜芯易Sourcengine

ONSEMI UMC3NT1

生命周期状态
Active
说明
TRANS BRT NPN/PNP DUAL SOT-353
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G5
Configuration
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
Number of Elements
2
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN AND PNP
DC Current Gain-Min (hFE)
35
Power Dissipation-Max (W)
0.15
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50