United Silicon Carbide, inc. UJN1208K | 搜芯易Sourcengine

United Silicon Carbide, inc. UJN1208K

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 21A I(D), 1200V, 0.095ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
21
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
1200
Pulsed Drain Current-Max (IDM) (A)
41
Drain-source On Resistance-Max (ohm)
0.095