ASI Semiconductor, Inc. UHBS60-2 | 搜芯易Sourcengine

ASI Semiconductor, Inc. UHBS60-2

生命周期状态
Active
说明
RF Power Bipolar Transistor, 1-Element, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
190
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
9
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
26
Collector-base Capacitance-Max (pF)
75