Diodes Incorporated UFZT796A | 搜芯易Sourcengine

Diodes Incorporated UFZT796A

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
Matte Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
100
Collector Current-Max (IC)
0.5 A
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
200 V
Peak Reflow Temperature (Cel)
260
Transition Frequency-Nom (fT)
100 MHz
Time@Peak Reflow Temperature-Max (s)
40