UF2801KI
TYCO ELECTRONICS M/A-COM
- 生命周期状态Transferred
- 说明RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-39
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-39
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)10
- Drain Current-Max (ID) (A)0.7
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Feedback Cap-Max (Crss) (pF)1.2
- Operating Temperature-Max (Cel)200
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)5.1
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UF2801KI