M/A-COM INC UF2801K1 | 搜芯易Sourcengine

M/A-COM INC UF2801K1

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-39
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-39
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Power Gain-Min (Gp)
10 dB
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.7 A
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
1.2 pF
DS Breakdown Voltage-Min
65 V
Operating Temperature-Max
200 Cel
Operating Temperature-Min
-55 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
5.1 W