UTC, Ltd. UD606G-S08-R | 搜芯易Sourcengine

UTC, Ltd. UD606G-S08-R

生命周期状态
Active
说明
Power Field-Effect Transistor, 8A I(D), 40V, 0.033ohm, 2-Element, N-Channel and P-Channel, Silicon, Trench Mosfet FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W)
1.25
Drain Current-Max (ID) (A)
8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
87
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
1.25
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
0.033