U635H64BDC25G1
ZENTRUM MIKROELEKTRONIK DRESDEN AG
- 生命周期状态Transferred
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Non-Volatile SRAM, 8KX8, 25ns, CMOS, PDIP28
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)7.62
- Length (mm)34.7
- JESD-30 CodeR-PDIP-T28
- Memory Width8
- Package CodeDIP
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee3
- Memory IC TypeNON-VOLATILE SRAM
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Memory Organization8KX8
- Number of Functions1
- Number of Terminals28
- Terminal Pitch (mm)2.54
- Access Time-Max (ns)25
- Number of Words Code8K
- Memory Density (bits)65536
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)5.1
- Supply Voltage-Max (V)5.5
- Supply Voltage-Min (V)4.5
- Supply Voltage-Nom (V)5
- Number of Words (words)8192
- Moisture Sensitivity Level3
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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U635H64BDC25G1