Toshiba Corporation TW060N120C | 搜芯易Sourcengine

Toshiba Corporation TW060N120C

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 36A I(D), 1200V, 0.078ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
170
Drain Current-Max (ID) (A)
36
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
1200
Feedback Cap-Max (Crss) (pF)
2.8
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Pulsed Drain Current-Max (IDM) (A)
87
Drain-source On Resistance-Max (ohm)
0.078
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED