VISHAY SEMICONDUCTORS TSDF1220R-GS08 | 搜芯易Sourcengine

VISHAY SEMICONDUCTORS TSDF1220R-GS08

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, X Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
X BAND
DC Current Gain-Min (hFE)
50
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.04
Collector-emitter Voltage-Max (V)
6
Power Dissipation Ambient-Max (W)
0.2
Transition Frequency-Nom (fT) (MHz)
12000
Time@Peak Reflow Temperature-Max (s)
40