ASI Semiconductor, Inc. TPV3100 | 搜芯易Sourcengine

ASI Semiconductor, Inc. TPV3100

生命周期状态
Active
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
20
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
8
Operating Temperature-Max (Cel)
200
Transition Frequency-Nom (fT) (MHz)
230