Toshiba Corporation TPM2323-60 | 搜芯易Sourcengine

Toshiba Corporation TPM2323-60

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
26 A
Highest Frequency Band
S BAND
DS Breakdown Voltage-Min
15 V
Operating Temperature-Max
175 Cel
Transistor Element Material
GALLIUM ARSENIDE
Peak Reflow Temperature (Cel)
240
Power Dissipation Ambient-Max
185 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED