Toshiba Corporation TPM1919-60 | 搜芯易Sourcengine

Toshiba Corporation TPM1919-60

生命周期状态
Discontinued
说明
JFET transistor, gaas fet partially matched, 1ghz, 185w
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Drain Current-Max (ID) (A)
26
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
15
Operating Temperature-Max (Cel)
175