Toshiba Corporation TPH7R506NH,L1Q | 搜芯易Sourcengine

Toshiba Corporation TPH7R506NH,L1Q

生命周期状态
Active
RoHS
符合RoHS标准
说明
MOSFET N-CH 60V 22A 8SOP
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
45
Drain Current-Max (ID) (A)
22
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
80
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
132
Pulsed Drain Current-Max (IDM) (A)
66
Drain-source On Resistance-Max (ohm)
0.019