Toshiba Corporation TPH3300CNH,L1Q(M | 搜芯易Sourcengine

Toshiba Corporation TPH3300CNH,L1Q(M

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH Si 150V 29A 8-Pin SOP Advance T/R
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
57
Drain Current-Max (ID) (A)
18
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
150
Feedback Cap-Max (Crss) (pF)
50
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
53
Pulsed Drain Current-Max (IDM) (A)
61
Drain-source On Resistance-Max (ohm)
0.033