Toshiba Corporation TPH2900ENH | 搜芯易Sourcengine

Toshiba Corporation TPH2900ENH

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 33A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-F5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
33
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Avalanche Energy Rating (Eas) (mJ)
176
Pulsed Drain Current-Max (IDM) (A)
102
Drain-source On Resistance-Max (ohm)
0.029