Toshiba Corporation TPCP8507 | 搜芯易Sourcengine

Toshiba Corporation TPCP8507

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
60
Power Dissipation-Max (W)
3
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
120
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED