Toshiba Corporation TPCP8206 | 搜芯易Sourcengine

Toshiba Corporation TPCP8206

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Small Signal Field-Effect Transistor, 6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
6 A
Feedback Cap-Max (Crss)
47 pF
DS Breakdown Voltage-Min
20 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.035 ohm
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED