Toshiba Corporation TPCA8010-H | 搜芯易Sourcengine

Toshiba Corporation TPCA8010-H

生命周期状态
EOL
说明
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
45
Drain Current-Max (ID) (A)
5.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
19
Pulsed Drain Current-Max (IDM) (A)
11
Drain-source On Resistance-Max (ohm)
0.45