Motorola,Inc. TP3010S | 搜芯易Sourcengine

Motorola,Inc. TP3010S

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Finish
TIN LEAD
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
7 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
25
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
2 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
16 V
Collector-base Capacitance-Max
8 pF