ASI Semiconductor, Inc. TP2314 | 搜芯易Sourcengine

ASI Semiconductor, Inc. TP2314

生命周期状态
Active
说明
RF Small Signal Bipolar Transistor, 1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-39
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
5
Power Dissipation-Max (W)
8
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
18
Collector-base Capacitance-Max (pF)
20