Toshiba Corporation TOLD9442M(TR) | 搜芯易Sourcengine

Toshiba Corporation TOLD9442M(TR)

生命周期状态
Discontinued
说明
Laser Diode, 650nm
类别
Semiconductors Optoelectronics Laser Diodes LASER DIODE

Packing Method
TR
Mounting Feature
THROUGH HOLE MOUNT
Peak Wavelength (nm)
650
Semiconductor Material
AlGaInP
Forward Current-Max (A)
0.06
Forward Voltage-Max (V)
3
Optoelectronic Device Type
LASER DIODE
Operating Temperature-Max (Cel)
60
Operating Temperature-Min (Cel)
-10