Rochester Electronics, LLC TM4256GU8-20L | 搜芯易Sourcengine

Rochester Electronics, LLC TM4256GU8-20L

生命周期状态
Active
说明
DRAM Module, 256KX8, 200ns, NMOS
类别
Semiconductors Memory ICs DRAMs DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
NMOS
Access Mode
PAGE
JESD-30 Code
R-XSMA-N30
Memory Width
8
Package Code
SIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Temperature Grade
COMMERCIAL
Terminal Position
SINGLE
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Memory Organization
256KX8
Number of Functions
1
Number of Terminals
30
Access Time-Max (ns)
200
Number of Words Code
256K
Memory Density (bits)
2097152
Package Body Material
UNSPECIFIED
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
262144
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0