Mitsubishi Electric Corp. TM200GZ-M | 搜芯易Sourcengine

Mitsubishi Electric Corp. TM200GZ-M

生命周期状态
NRFND
说明
Silicon Controlled Rectifier, 314A I(T)RMS, 200A I(T), 400V V(DRM), 400V V(RRM), 1 Element
类别
Semiconductors Trigger Devices Silicon Controlled Rectifiers SCR

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.30.00.80
SB Code
8541.30.00.80

JESD-30 Code
R-PUFM-X6
Configuration
SINGLE WITH BUILT-IN ANTI-PARALLEL DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
1
Leakage Current-Max
30 mA
Number of Terminals
6
Trigger Device Type
SCR
On-state Current-Max
200 A
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Desc. of Quick-Connects
G-GR
Desc. of Screw Terminals
4AK
RMS On-state Current-Max
314 A
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-40 Cel
DC Gate Trigger Current-Max
100 mA
DC Gate Trigger Voltage-Max
3 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Non-Repetitive Pk On-state Cur
4000 A
Repetitive Peak Reverse Voltage
400 V
Repetitive Peak Off-state Voltage
400 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED