TM10T3B-H
Mitsubishi Electric Corp.
- 生命周期状态NRFND
- 说明Silicon Controlled Rectifier, 15.7A I(T)RMS, 800V V(DRM), 800V V(RRM), 3 Element
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.30.00.80
- SB Code8541.30.00.80
- JESD-30 CodeR-PUFM-D9
- Configuration3 PHASE BRIDGE, HALF-CONTROLLED, COMMON CATHODE WITH BUILT-IN SERIES DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements3
- Leakage Current-Max4 mA
- Number of Terminals9
- Trigger Device TypeSCR
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Desc. of Quick-Connects0
- Desc. of Screw Terminals0
- RMS On-state Current-Max15.7 A
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-40 Cel
- DC Gate Trigger Current-Max50 mA
- DC Gate Trigger Voltage-Max2 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Non-Repetitive Pk On-state Cur200 A
- Repetitive Peak Reverse Voltage800 V
- Repetitive Peak Off-state Voltage800 V
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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TM10T3B-H