Toshiba Corporation TK65G10N1 | 搜芯易Sourcengine

Toshiba Corporation TK65G10N1

生命周期状态
EOL
说明
Power Field-Effect Transistor, 100A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
100 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
42 pF
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
156 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
93 mJ
Drain-source On Resistance-Max
0.0045 ohm
Pulsed Drain Current-Max (IDM)
283 A