Toshiba Corporation TK4R4P06PL | 搜芯易Sourcengine

Toshiba Corporation TK4R4P06PL

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 58A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
87
Drain Current-Max (ID) (A)
58
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
60
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
42
Pulsed Drain Current-Max (IDM) (A)
330
Drain-source On Resistance-Max (ohm)
0.0044