Toshiba Corporation TK4P60D | 搜芯易Sourcengine

Toshiba Corporation TK4P60D

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH Si 600V 4A 3-Pin(2+Tab) DPAK
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
100
Drain Current-Max (ID) (A)
4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
158
Pulsed Drain Current-Max (IDM) (A)
16
Drain-source On Resistance-Max (ohm)
1.7