Toshiba Corporation TK13A50D | 搜芯易Sourcengine

Toshiba Corporation TK13A50D

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
45
Drain Current-Max (ID) (A)
13
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
390
Pulsed Drain Current-Max (IDM) (A)
52
Drain-source On Resistance-Max (ohm)
0.4
Time@Peak Reflow Temperature-Max (s)
30