Toshiba Corporation TK12X53D | 搜芯易Sourcengine

Toshiba Corporation TK12X53D

生命周期状态
EOL
说明
Power Field-Effect Transistor, 12A I(D), 525V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PDSO-F4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
12 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
525 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
378 mJ
Drain-source On Resistance-Max
0.58 ohm
Pulsed Drain Current-Max (IDM)
48 A