Toshiba Corporation TK10V60W,LVQ | 搜芯易Sourcengine

Toshiba Corporation TK10V60W,LVQ

生命周期状态
Active
RoHS
符合RoHS标准
说明
TK10V60W,LVQ Toshiba MOSFETs Transistor N-CH 600V 9.7A 5-Pin DFN EP T/R - Arrow.com
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PSSO-N4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
SUPERJUNCTION MOSFET
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
88.3
Drain Current-Max (ID) (A)
9.7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Feedback Cap-Max (Crss) (pF)
2.3
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
74.5
Pulsed Drain Current-Max (IDM) (A)
38.8
Drain-source On Resistance-Max (ohm)
0.38