Toshiba Corporation TK10A80E,S4X(S | 搜芯易Sourcengine

Toshiba Corporation TK10A80E,S4X(S

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
50
Drain Current-Max (ID) (A)
10
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
800
Feedback Cap-Max (Crss) (pF)
15
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
454
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
1