Toshiba Corporation TK100E10N1 | 搜芯易Sourcengine

Toshiba Corporation TK100E10N1

生命周期状态
Active
说明
MOSFET high speed, low-voltage n-ch mosfet 100v
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
255
Drain Current-Max (ID) (A)
100
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
222
Pulsed Drain Current-Max (IDM) (A)
434
Drain-source On Resistance-Max (ohm)
0.0034