Toshiba Corporation TK099V65Z,LQ(S | 搜芯易Sourcengine

Toshiba Corporation TK099V65Z,LQ(S

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 30A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PSSO-N4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
230
Drain Current-Max (ID) (A)
30
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
2
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
265
Pulsed Drain Current-Max (IDM) (A)
120
Drain-source On Resistance-Max (ohm)
0.099