Toshiba Corporation TJ40S04M3L,LXHQ | 搜芯易Sourcengine

Toshiba Corporation TJ40S04M3L,LXHQ

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET P-CH Si 40V 40A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
68
Drain Current-Max (ID) (A)
40
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
410
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
72
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.013
Screening Level / Reference Standard
AEC-Q101